smd type ic www.kexin.com.cn 1 smd type ic switching KP8M8 features low on-resistance. built-in g-s protection diode. small and surface mount package. power switching, dc / dc converter. absolute maximum ratings ta = 25 parameter symbol n-channel p-channel unit drain-source voltage v dss 30 -30 v gate-source voltage v gss 20 -20 v drain current continuous i d 6.0 4.5 a drain current pulsed * i dp 24 18 a source current (body diode) continuous i s 1.6 -1.6 a source current (body diode) pulsed * i sp 20 -18 a total power dissipation p d w channel temperature t ch storage temperature t stg channel to ambient r th (ch-a) /w *pw 10 s, duty cycle 1% 2 150 -55to+150 62.5
www.kexin.com.cn 2 smd type ic smd type ic electrical characteristics ta = 25 parameter symbol min typ max unit v gs =20v,v ds =0v n-ch 10 v gs =-20v,v ds =0v p-ch -10 i d =1ma,v gs =0v n-ch 30 i d =-1ma,v gs =0v p-ch -30 v ds =30v,v gs =0v n-ch 1 v ds =-30v,v gs =0v p-ch -1 v ds =10v,i d =1ma n-ch 1.0 2.5 v ds =-10v,i d =-1ma p-ch -1.0 -2.5 i d =6.0a,v gs =10a 21 30 i d =6.0a,v gs =4.5v 30 42 i d =6.0a,v gs =4v 33 47 i d =-4.5a,v gs =-10a 40 56 i d =-2.5a,v gs =-4.5v 57 80 i d =-2.5a,v gs =-4.0v 65 90 i d =6.0a,v ds =10v n-ch 4.0 i d =-2.5a,v ds =-10v p-ch 3.5 n-channel n-ch 520 v ds =10v,v gs =0v,f=1mhz p-ch 850 n-ch 150 p-channel p-ch 190 v ds =-10v,v gs =0v,f=1mhz n-ch 95 p-ch 120 i d =3a,v dd =15v n-ch 9 i d =-2.5a,v dd =-15v p-ch 10 n-channel n-ch 21 v gs =10v,r l =5.0 ,r g =10 p-ch 25 n-ch 36 p-channel p-ch 60 v gs =-10v,r l =6.0 ,r g =10 n-ch 13 p-ch 25 n-channel n-ch 7.2 10.1 v dd =15v,v gs =5v,i d =6.0a p-ch 8.5 n-ch 1.8 p-channel p-ch 2.5 v dd =-15v,v gs =-5v,i d =-4.5a n-ch 2.8 p-ch 3.0 i s =6.4a, v gs =0v n-ch 1.2 i s =-1.6a, v gs =0v p-ch -1.2 i dss zero gate voltage drain current v gs (th) i gss gate-source leakage v (br) dss drain-source breakdown voltage gate threshold voltage pf pf r ds (on) static drain-source on-state resistance |y fs | forward transfer admittance c oss output capacitance m input capacitance t d(on) turn-on delay time tr rise time fall time q g total gate charge r ds (on) static drain-source on-state resistance t d (off) turn-off delay time c rss reverse transfer capacitance c iss v sd forward voltage testconditons n-ch p-ch q gs gate-source charge q gd gate-drain charge t f m s a v a v pf ns v nc nc nc ns ns ns KP8M8
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